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February 11, 2020 | 3:30 p.m. - 4:30 p.m.
Category: Seminar
Location: Physics & Astronomy Department - Liberal Arts and Sciences #245 | Map
666 W. Hancock
Detroit, MI 48201
Cost: Free
Audience: Academic Staff, Alumni, Current Graduate Students, Current Undergraduate Students, Faculty
High Mobility n-type PdSe2 Field Effect Transistors Enabled by Contact Engineering
 
Arthur Bowman
Department of Physics and Astronomy, Wayne State University
 
Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) have emerged as a promising candidate for post-silicon electronics. One such material of interest is palladium diselenide (PdSe2) because of its high electron mobility and excellent chemical stability. However, in spite of its relatively small bandgap, the performance of few-layer PdSe2 field-effect transistors (FETs) has been largely limited by the presence of a substantial Schottky barrier, which is likely due to Fermi-level pinning. In this work, we report the fabrication of high mobility n-type PdSe2 FETs, using a new method to significantly reduce the barrier height at the semiconductor/metal interface. As a result, we observed an order of magnitude reduction of contact resistance in comparison with conventional metal contacts. The effective mobility also improved from 133 cm^2 V^-1 s^-1 to ~ 256 cm^2 V^-1 s^-1 at room temperature, and from 260 cm^2 V^-1 s^-1 to ~ 670 cm^2 V^-1 s^-1 at 77 K. We believe the significantly improved device performance enabled by this novel contact engineering technique will enable further studies of the intrinsic properties of PdSe2 and other exciting new 2D material.
 
For more information about this event, please contact Zhi-Feng Huang at 3135772791 or huang@wayne.edu.