Electronic, Thermal, and (Some) Unusual Applications of 2D Materials

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Date: October 1, 2020
Time: 3:45 p.m. - 4:45 p.m.
Location: Zoom
1650 MERRIWEATHER DR
troy, mi 48085
Category: Seminar

Electronic, Thermal, and (Some) Unusual Applications of 2D Materials

Eric Pop

Electrical Engineering, Materials Science & Engineering, and SystemX Alliance

Stanford University, Stanford CA 94305, U.S.A.

This talk will present recent highlights from our research on two-dimensional (2D) materials, including graphene, boron nitride (h-BN), and transition metal dichalcogenides (TMDs). Our results span from material growth and fundamental measurements, to simulations, devices, and system-oriented applications. We have grown monolayer 2D semiconductors over large areas, including MoS2 [1], WSe2, and MoSe2 [2]. We also uncovered that ZrSe2 and HfSe2 have native high-κ dielectrics ZrO2 and HfO2, which are of key technological relevance [3]. Improved electrical contacts [4] led to the realization of 10 nm monolayer MoS2 transistors with high current density, near ballistic limits [5]. We have also demonstrated new memory devices based on Mo-, Sb-, and Ge- tellurides [6,7]. These could all play a role in 3D heterogeneous integration of nanoelectronics, which presents significant advantages for energy-efficient computation [8]. I will also describe a few less conventional applications, where we used 2D materials as highly efficient thermal insulators [9] and as thermal transistors [10]. These could enable control of heat in “thermal circuits” analogous with electrical circuits. Combined, these studies reveal fundamental limits and some unusual applications of 2D materials, which take advantage of their unique properties.

Contact

ashis mukhopadhyay
3135772775
ashis@wayne.edu

Cost

Free

Audience

Alumni, Community, Current students, Faculty, Prospective students