Speaker

Becky (R. L.) Peterson, Associate Professor, University of Michigan, Electrical Engineering and Computer Science

Abstract

The physicist Richard Feynman famously quipped: “There’s plenty of room at the bottom,” thus kicking off several decades of nanoscience and nanotechnology development. To invert his message: “There’s plenty of room at the top!”, that is to say, there is plenty of room to expand vertically, in 3D, on top of silicon CMOS, at the back-end-of-line. In this talk I will describe my group’s recent work on developing manufacturable, substrate-agnostic growth methods for semiconductor materials and devices to add functional circuitry to silicon CMOS. By exploiting atomic layer deposition’s layer-by-layer synthesis capability, we can carefully control the chemical composition, film density, and defect profile to obtain high-purity semiconductors. My group has developed both n- and p-type oxide semiconductors, and have demonstrated their use in thin film transistors. Furthermore, by exploiting interfacial reduction/oxidation reactions of these semiconductors with various metals, we can create rectifying Schottky diodes and metal-semiconductor field effect transistors, and even memristive devices. Using in situ deposition of high-k gate dielectrics with oxide semiconductors, we have demonstrated MISFET transistors that rapidly turn on and off at the Boltzmann limit of 60 mV per decade of current. Finally, by coupling selective area atomic layer deposition with electro-hydrodynamic jetting, we can achieve the ultimate in 3-D device precision combined with fully-customizable circuit design. Lastly, I will describe some new opportunities and challenges facing 3D-IC.

Bio

Dr. Becky (R. L.) Peterson is an Associate Professor at the University of Michigan in Electrical Engineering and Computer Science, where she also serves as Director of the Lurie Nanofabrication Facility. She received her PhD from Princeton University, and was a post-doc at the Cavendish Laboratory at Cambridge University in the UK. Dr. Peterson is the recipient of an NSF CAREER award and a DARPA Young Faculty Award. She is a Senior Member of IEEE, and has been involved in conference leadership with IEEE International Electron Devices Meeting (IEDM), the Device Research Conference, and the Electronic Materials Conference. 

Location

In-Person: James and Patricia Anderson College of Engineering, Room: 3130 ECE Conference Room

Online (MS Teams): ID: 236 085 004 635 7, Passcode: Zm9MS93n